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S29GL01GP13FFIV13 The Cypress Semiconductor S29GL01GP13FFIV13 is a 1Gbit Parallel NOR Flash Memory device. It operates with a supply voltage range of 1.65V to 3.6V and features an access time of 130 ns.
Mfr Part #:

S29GL01GP13FFIV13

Available from 1 distributors
Mfr Name: Cypress Semiconductor
Cypress Semiconductor
The Cypress Semiconductor S29GL01GP13FFIV13 is a 1Gbit Parallel NOR Flash Memory device. It operates with a supply voltage range of 1.65V to 3.6V and features an access time of 130 ns.
✓ Total Stock: 16,387 pcs
$ Price Range: $1.28

S29GL01GP13FFIV13 Available from 1 distributor

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S29GL01GP13FFIV13 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Access Time
Memory Format
Memory Interface
Memory Organization
Memory Size
Memory Type
Mounting Type
Operating Temperature
Supplier Device Package
Tape & Reel
Technology
Voltage
Voltage Supply
Write Cycle Time
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S29GL01GP13FFIV13 Description

Short technical summary and product information.

The Cypress Semiconductor S29GL01GP13FFIV13 is a 1 Gbit Parallel NOR Flash Memory, fabricated using 90 nm MirrorBit process technology. It offers a fast page access time of 25 ns and a random access time as fast as 90 ns. The device features a 32-word/64-byte write buffer, which significantly reduces overall programming time for multiple-word updates, making it suitable for embedded applications requiring high density and performance.

 

This flash memory operates within a voltage range of 1.65V to 3.6V and has an access time of 130 ns. The operating temperature range is -40°C to 85°C. It is packaged in a 64-FBGA (13x11) and mounted using surface mount technology.

 

Key features include a uniform 64 Kword/128 Kbyte sector architecture, 100,000 erase cycles per sector typical, and 20-year data retention typical. The device supports Suspend and Resume commands for Program and Erase operations, along with Persistent and Password methods for Advanced Sector Protection.

S29GL01GP13FFIV13 Quick Information

Product Type: Flash Memory
Canonical Name: 1 Gbit Parallel NOR Flash Memory
Subcategory: NOR Flash

S29GL01GP13FFIV13 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

S29GL01GP13FFIV13 Estimated Pricing

Qty Low High
1+ $1.28 $1.28

Estimated market price range - modelled values for guidance only, not live distributor offers.

S29GL01GP13FFIV13 Features

  • 1Gbit Parallel NOR Flash Memory.
  • 1.65V to 3.6V operating voltage range.
  • 130ns access time.
  • Surface mount 64-FBGA package.
  • Wide -40°C to 85°C operating temperature.

S29GL01GP13FFIV13 Applications

  • Used in embedded flash storage systems.
  • Suitable for high-density data logging.
  • Ideal for firmware storage in networking equipment.
  • Applied in industrial control memory modules.
  • Used in automotive infotainment systems.

S29GL01GP13FFIV13 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the operating voltage range for the S29GL01GP13FFIV13?

The S29GL01GP13FFIV13 operates with a supply voltage range of 1.65V to 3.6V.

What is the operating temperature range of this device?

The operating temperature range for the S29GL01GP13FFIV13 is -40°C to 85°C (TA).

What type of package does the S29GL01GP13FFIV13 come in?

The S29GL01GP13FFIV13 is supplied in a 64-FBGA (13x11) package, also described as a 64-LBGA or 64-ball Fortified BGA.

What is the memory size of the S29GL01GP13FFIV13?

The memory size of the S29GL01GP13FFIV13 is 1Gbit.

What is the access time for this FLASH memory?

The access time for the S29GL01GP13FFIV13 is 130 ns.

What is the typical data retention period?

The typical data retention for this device is 20 years.

How many erase cycles per sector can this device withstand?

The S29GL01GP13FFIV13 has a typical endurance of 100,000 erase cycles per sector.

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