S29GL01GP13FAIV20

The Cypress Semiconductor S29GL01GP13FAIV20 is a 1 Gbit MirrorBit Flash memory product fabricated using 90 nm process technology. This device offers a fast page access time of 25 ns and a random access time as fast as 90 ns. It includes a write buffer that allows up to 32 words (64 bytes) to be programmed in a single operation, enhancing programming efficiency for embedded applications.

Key electrical characteristics include a memory size of 1 Gbit, a non-volatile memory type, and FLASH - NOR technology. The memory organization is 128M x 8, with a parallel interface. It has an access time of 130 ns and a write cycle time of 130 ns. The operating voltage range is 1.65V to 3.6V.

This Flash memory operates within a temperature range of -40°C to 85°C (TA). It is available in a surface mount package, specifically a 64-FBGA (13x11) or 64-LBGA. The datasheet also mentions 56-pin TSOP and 64-ball Fortified BGA as offered packages. The device boasts typical data retention of 20 years and 100,000 erase cycles per sector.

Ideal for embedded systems requiring high density, performance, and lower power consumption, the S29GL01GP13FAIV20 supports features like suspend and resume commands for program and erase operations, and unlock bypass program commands to reduce programming time.