| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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33,396 pcs
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33396 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Cypress Semiconductor S29GL01GP12TFI020 is a 1 Gbit NOR Flash memory product fabricated using 90 nm MirrorBit process technology. It offers a fast page access time of 25 ns and a random access time as fast as 90 ns. This device is designed for embedded applications requiring high density, performance, and lower power consumption.
Key electrical characteristics include a wide operating voltage range of 2.7V to 3.6V and a memory interface of Parallel. The memory organization is 128M x 8, providing a total capacity of 1 Gbit. It supports a write cycle time of 120 ns.
This Flash memory is housed in a 56-TSOP package and is suitable for surface mount applications. It operates within a temperature range of -40°C to 85°C (TA). The device offers features like a write buffer for faster programming and uniform sector architecture.
With a typical data retention of 20 years and 100,000 erase cycles per sector, the S29GL01GP12TFI020 is built for reliability in demanding embedded systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The operating voltage range is 2.7V to 3.6V.
The operating temperature range is -40°C to +85°C (TA).
It comes in a 56-TFSOP (0.724", 18.40mm Width) surface mount package, also known as 56-TSOP.
The memory size is 1 Gbit organized as 128M x 8.
The access time is 120 ns, with a typical random access time of 90 ns and page access time of 25 ns.
It supports 100,000 erase cycles per sector.
The typical data retention is 20 years.