| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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37,853 pcs
|
37853 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Tape & Reel | |
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The Cypress Semiconductor S29GL01GP12FFI020 is a 1Gbit NOR Flash memory device designed for embedded applications requiring high density and performance. Fabricated using 90 nm MirrorBit process technology, it offers a fast page access time of 25 ns and a random access time as fast as 90 ns. The device supports a single 3V read/program/erase operation with a voltage range of 2.7V to 3.6V.
Key electrical characteristics include a 120 ns access time and a 120 ns write cycle time. It features a 32-word/64-byte write buffer to reduce programming time for multiple-word updates. The memory is organized as 128M x 8 bits and utilizes a parallel interface. It operates reliably within an industrial temperature range of -40°C to 85°C.
Packaged in a 64-ball FBGA (64-LBGA) with surface mount mounting type, the S29GL01GP12FFI020 is suitable for compact designs. It offers 100,000 erase cycles per sector typical and 20-year data retention typical, ensuring long-term reliability for data storage in embedded systems and other demanding applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
2.7V to 3.6V.
-40°C to 85°C.
64-LBGA (supplier package 64-FBGA 9x9).
1 Gbit, organized as 128M x 8.
120 ns access time (typical random access 90 ns, typical page access 25 ns).
Parallel interface.
Typical data retention of 20 years and 100,000 erase cycles per sector.