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S29GL01GP12FAI010 The Cypress Semiconductor S29GL01GP12FAI010 is a 1 Gbit parallel NOR Flash memory device. It features a 120 ns access time and operates from a 2.7V to 3.6V supply.
Mfr Part #:

S29GL01GP12FAI010

Available from 1 distributors
Mfr Name: Cypress Semiconductor
Cypress Semiconductor
The Cypress Semiconductor S29GL01GP12FAI010 is a 1 Gbit parallel NOR Flash memory device. It features a 120 ns access time and operates from a 2.7V to 3.6V supply.
✓ Total Stock: 2,480 pcs
$ Price Range: $1.28

S29GL01GP12FAI010 Available from 1 distributor

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2,480 pcs
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S29GL01GP12FAI010 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Access Time
Memory Format
Memory Interface
Memory Organization
Memory Size
Memory Type
Mounting Type
Operating Temperature
Supplier Device Package
Technology
Voltage
Write Cycle Time
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S29GL01GP12FAI010 Description

Short technical summary and product information.

The Cypress Semiconductor S29GL01GP12FAI010 is a high-performance 1 Gbit NOR Flash memory, fabricated using 90 nm MirrorBit process technology. This device offers a fast page access time of 25 ns and a random access time as fast as 90 ns, making it suitable for demanding embedded applications.

 

Key electrical characteristics include a memory size of 1 Gbit, a parallel interface, and a voltage range of 2.7V to 3.6V. It supports a write cycle time of 120 ns and features a 32-word/64-byte write buffer to reduce programming times.

 

The memory is organized as 128M x 8 and utilizes a uniform 64 Kword/128 Kbyte sector architecture. It is rated for an operating temperature range of -40°C to 85°C (TA).

 

Packaged in a 64-FBGA (13x11) format, the S29GL01GP12FAI010 is designed for surface mounting. It offers typical data retention of 20 years and 100,000 erase cycles per sector.

S29GL01GP12FAI010 Quick Information

Product Type: Flash Memory
Canonical Name: Cypress Semiconductor S29GL01GP12FAI010 1 Gbit Parallel Flash Memory
Subcategory: NOR Flash

S29GL01GP12FAI010 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

S29GL01GP12FAI010 Estimated Pricing

Qty Low High
1+ $1.28 $1.28

Estimated market price range - modelled values for guidance only, not live distributor offers.

S29GL01GP12FAI010 Features

  • 1 Gbit parallel NOR Flash memory.
  • Fast 90 ns random access time.
  • Single 2.7V to 3.6V supply voltage.
  • 64-FBGA package for surface mounting.
  • Wide -40°C to 85°C operating temperature.

S29GL01GP12FAI010 Applications

  • Ideal for embedded systems.
  • Suitable for high-density storage.
  • Supports fast data programming.
  • Reliable long-term data retention.

S29GL01GP12FAI010 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the memory size of the S29GL01GP12FAI010?

1 Gbit.

What is the access time of this NOR Flash?

120 ns.

What is the operating temperature range?

-40°C to 85°C (TA).

What is the package type?

64-FBGA (13x11).

What is the supply voltage range?

2.7V to 3.6V.

What is the erase cycle endurance?

100,000 erase cycles per sector typical.

What is the data retention period?

20 years typical.

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