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S29GL01GP11TFIR20 The Silicon Labs S29GL01GP11TFIR20 is a 1 Gbit Parallel NOR Flash Memory device. It operates from a 2.7V to 3.6V supply and features an access time of 110ns.
Mfr Part #:

S29GL01GP11TFIR20

Available from 1 distributors
Mfr Name: Silicon Labs
Silicon Labs
The Silicon Labs S29GL01GP11TFIR20 is a 1 Gbit Parallel NOR Flash Memory device. It operates from a 2.7V to 3.6V supply and features an access time of 110ns.
✓ Total Stock: 5,000 pcs
$ Price Range: $1.28

S29GL01GP11TFIR20 Available from 1 distributor

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Risen Electronics ✓
Non-Authorised Inventory information
5,000 pcs
On Request
5000 pcs On Request 1 On Request On Request On Request On Request 2026-06-29 21:33:16
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S29GL01GP11TFIR20 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Access Time
Architecture
Lead Spacing
Lead Style
Memory Size
Mounting Style
Operating Temperature
SVHC Present
Storage Temperature
Supply Current
Supply Voltage
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S29GL01GP11TFIR20 Description

Short technical summary and product information.

The Silicon Labs S29GL01GP11TFIR20 is a high-performance 1 Gbit Parallel NOR Flash Memory, fabricated using 90 nm MirrorBit process technology. This device offers a fast page access time of 25 ns and a random access time as fast as 90 ns. It is designed for embedded applications requiring high density, improved performance, and lower power consumption.

 

Key electrical characteristics include a supply voltage range of 2.7V to 3.6V and a maximum supply current of 110 mA. The memory features a 32-word/64-byte write buffer for faster programming and an 8-word/16-byte page read buffer. The uniform sector architecture is organized as 128 M x 8 bits.

 

This NOR Flash memory is housed in a 56-pin TSOP package, suitable for surface mount (SMD/SMT) applications. It operates within a temperature range of -40 C to +85 C, offering reliability in various environmental conditions. The device also boasts 100,000 erase cycles per sector typical and 20-year data retention typical.

S29GL01GP11TFIR20 Quick Information

Product Type: NOR Flash Memory
Series: S29gl01gp11
Canonical Name: 1 Gbit Parallel NOR Flash Memory
Subcategory: NOR Flash

S29GL01GP11TFIR20 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

S29GL01GP11TFIR20 Estimated Pricing

Qty Low High
1+ $1.28 $1.28

Estimated market price range - modelled values for guidance only, not live distributor offers.

S29GL01GP11TFIR20 Features

  • 1 Gbit density Parallel NOR Flash memory.
  • Operates from 2.7V to 3.6V supply.
  • 110ns maximum access time.
  • TSOP-56 package for surface mounting.
  • Wide operating temperature range of -40 C to +85 C.

S29GL01GP11TFIR20 Applications

  • Used in embedded systems requiring code storage.
  • Ideal for boot code and firmware applications.
  • Suitable for automotive and industrial control units.
  • Deployed in networking and telecommunications equipment.
  • Perfect for consumer electronics with high-density memory needs.

S29GL01GP11TFIR20 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the operating voltage range of the S29GL01GP11TFIR20?

2.7V to 3.6V.

What is the package type of the S29GL01GP11TFIR20?

TSOP-56 (Thin Small Outline Package, 56 pins).

What is the operating temperature range?

-40°C to 85°C.

What is the access time of this memory?

110 ns.

How many erase cycles can each sector endure?

100,000 erase cycles per sector typical.

What is the data retention period?

20 years typical.

What is the memory organization?

128M x 8 (1 Gbit total).

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