| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,000 pcs
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2000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon Technologies S29GL01GP11TFCR10 is a high-performance 1Gbit parallel NOR Flash memory, fabricated using 90 nm MirrorBit process technology. It offers a fast page access time of 25 ns and a random access time as fast as 90 ns, making it suitable for demanding embedded applications.
This device operates with a single 3V read/program/erase supply voltage ranging from 2.7V to 3.6V. It includes a 32-word/64-byte write buffer to reduce programming time for multiple-word updates. The memory is organized as 128M x 8 bits and features a uniform 64 Kword/128 Kbyte sector architecture.
Packaged in a 56-TSOP, the S29GL01GP11TFCR10 is designed for surface mounting. It provides 20-year data retention and typically withstands 100,000 erase cycles per sector. Enhanced VersatileI/O control allows input levels to be determined by the VIO input voltage.
Key features include support for CFI (Common Flash Interface), Suspend and Resume commands for program and erase operations, and a hardware reset input. The Ready/Busy# output indicates program or erase cycle completion.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The memory size is 1 Gbit.
The operating voltage is between 2.7V and 3.6V.
The access time is 110 ns.
It is supplied in a 56-TSOP package.
The operating temperature range is 0°C to 85°C (TA).
The write cycle time per page is 110 ns.