| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
8,500 pcs
|
8500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Cypress Semiconductor S29GL01GP11FFIR20 is a 1 Gbit MirrorBit® Flash memory product fabricated using 90 nm process technology. It offers a fast page access time of 25 ns and a random access time as fast as 90 ns. The device includes a 32-word/64-byte write buffer to reduce programming time for multiple-word updates, making it suitable for embedded applications requiring high density and performance.
Key electrical characteristics include a memory size of 1 Gbit, organized as 128M x 8, with a parallel interface. It operates with a voltage supply range of 3V to 3.6V and has an access time of 110 ns. The operating temperature range is -40°C to 85°C (TA).
This flash memory is available in a 64-LBGA package and supports surface mount technology. It offers 100,000 erase cycles per sector typical and 20-year data retention typical. The device supports Suspend and Resume commands for Program and Erase operations, along with Write operation status bits to indicate completion.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The memory size is 1 Gbit.
The operating voltage is between 3V and 3.6V.
The access time is 110 ns.
The operating temperature range is -40°C to 85°C (TA).
It is available in a 64-LBGA package.
The typical number of erase cycles per sector is 100,000.
The typical data retention period is 20 years.