| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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6,000 pcs
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6000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | 2026-06-29 21:33:16 |
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The Cypress S29GL01GP11FFIR10 is a high-performance 1 Gbit Page Flash Memory designed for embedded applications. Fabricated using 90nm MirrorBit process technology, it provides a fast page access time of 25 ns and a random access time as fast as 90 ns.
This device supports a single 3V read, program, and erase operation within a 2.7-3.6V range. It features an enhanced VersatileI/O control, allowing input and output levels to be determined by the VIO input voltage, which ranges from 1.65V to VCC. A 32-word/64-byte write buffer is included to reduce overall programming time for multiple-word updates.
The S29GL01GP11FFIR10 has a uniform 64 Kword/128 Kbyte sector architecture. It offers typical data retention of 20 years and 100,000 erase cycles per sector. The device is available in 56-pin TSOP and 64-ball Fortified BGA packages, suitable for surface mount applications.
This flash memory is ideal for applications requiring higher density, better performance, and lower power consumption, such as in consumer electronics, industrial control, and telecommunications equipment.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The operating voltage range is 2.7V to 3.6V for read, program, and erase operations.
The device is available in 56-TSOP and 64-BGA surface mount packages.
The random access time is 90 ns maximum.
It supports 100,000 erase cycles per sector typical.
The data retention is 20 years typical.
It uses uniform 64 Kword/128 Kbyte sector architecture.