| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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196 pcs
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196 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon Technologies S29AL016J70BFI022 is a 16Mbit non-volatile memory device utilizing FLASH - NOR technology. It offers a parallel interface and operates across a voltage range of 2.7V to 3.6V, making it suitable for battery-powered applications.
Key electrical characteristics include a memory size of 16Mbit, organized as 2M x 8 or 1M x 16. It provides an access time of 70 ns and a write cycle time of 70 ns. The device operates within an industrial temperature range of -40°C to 85°C.
This memory component is available in a 48-FBGA (8.15x6.15) surface mount package. It also features low power consumption with a sleep mode current of 0.2 µA and a standby mode current of 0.2 µA.
Additional features include a data retention of 20 years typical and a cycling endurance of 1,000,000 cycles per sector typical. The datasheet also indicates availability in other package options such as 48-ball Fine-pitch BGA, 64-ball Fortified BGA, and 48-pin TSOP.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The S29AL016J70BFI022 operates within a voltage range of 2.7V to 3.6V.
The S29AL016J70BFI022 has an operating temperature range of -40°C to 85°C, with options extending up to 125°C.
The memory size of the S29AL016J70BFI022 is 16Mbit.
The S29AL016J70BFI022 uses a Parallel memory interface.
The S29AL016J70BFI022 has an access time as fast as 55 ns.
The typical data retention for this device is 20 years.
The S29AL016J70BFI022 has a cycling endurance of 1,000,000 cycles per sector.