| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
14,597 pcs
|
14597 pcs | On Request | 1 | On Request | On Request | 13+14+ | On Request | On Request | |
|
460 pcs
|
460 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The RZM002P02T2L from ROHM Semiconductor is a P-Channel MOSFET with a drain-source voltage rating of 20V. This component is designed for surface mount applications and comes in a VMT3 package, specifically SOT-723.
Key electrical characteristics include a maximum continuous drain current of 200mA at an ambient temperature (Ta) and a maximum power dissipation of 150mW under the same conditions. The on-resistance (Rds On) is specified as a maximum of 1.2 Ohms at 200mA and 4.5V gate-source voltage. The gate charge (Qg) is a maximum of 1.4 nC at 4.5V, and the input capacitance (Ciss) is a maximum of 115 pF at 10V.
The gate threshold voltage (Vgs(th)) is a maximum of 1V at 100µA. The maximum gate-source voltage (Vgs) is ±10V. The operating temperature range is up to 150°C (TJ).
This MOSFET utilizes Metal Oxide technology and is suitable for various electronic designs requiring a P-Channel switching component in a compact surface-mount package.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 20V.
It is available in a SOT-723 surface-mount package, also known as VMT3.
The maximum operating junction temperature is 150°C.
The continuous drain current is 200mA at ambient temperature.
The maximum power dissipation is 150mW at ambient temperature.
The maximum on-resistance is 1.2Ohm at 200mA drain current and 4.5V gate-source voltage.
The maximum gate threshold voltage is 1V at 100µA drain current.