| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
10,000 pcs
|
10000 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request | |
|
2,065 pcs
|
2065 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The RZF030P01TL from ROHM Semiconductor is a P-Channel MOSFET with a drain-to-source voltage (Vdss) of 12V. It is designed for surface mount applications and comes in a TUMT3 package.
Key electrical characteristics include a maximum continuous drain current of 3A (Ta) and a maximum on-resistance (Rds On) of 39mOhm at 3A and 4.5V gate-source voltage. The gate threshold voltage (Vgs(th)) is 1V at 1mA, and the maximum gate-to-source voltage is ±10V. Input capacitance (Ciss) is 1860pF at 6V, and gate charge (Qg) is 18nC at 4.5V.
This MOSFET operates at a maximum junction temperature of 150°C and has a maximum power dissipation of 800mW (Ta). It is classified as a MOSFET (Metal Oxide) technology.
The RZF030P01TL is suitable for various electronic circuits requiring a P-channel MOSFET with these specifications. Its surface mount package facilitates integration into compact designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
12V.
3A at ambient temperature.
39mOhm at 3A and 4.5V gate drive.
1V at 1mA.
Maximum junction temperature is 150°C.
3-SMD, Flat Leads package, also known as TUMT3.
18nC at 4.5V.