| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,349 pcs
|
2349 pcs | On Request | 1 | On Request | On Request | 17+ | On Request | On Request | |
|
230 pcs
|
230 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The ROHM Semiconductor RYM002N05T2CL is a single N-Channel MOSFET designed for surface mount applications. It features a maximum drain-source voltage (Vdss) of 50V and a continuous drain current of 200mA at ambient temperature.
Key electrical characteristics include a maximum on-resistance (Rds On) of 2.2 Ohms at 200mA and 4.5V, a gate threshold voltage (Vgs(th)) of 800mV at 1mA, and a maximum gate-source voltage (Vgs) of ±8V. The input capacitance (Ciss) is 26pF at 10V.
This MOSFET operates within a temperature range of -150°C to 150°C (TJ) and has a maximum power dissipation of 150mW (Ta). It is packaged in a VMT3 (SOT-723) case and is suitable for various electronic circuits requiring a small-signal N-channel MOSFET.
The device is RoHS3 compliant, has an MSL rating of 1, and is REACH unaffected. Its surface mount design facilitates integration into compact electronic assemblies.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 50V.
The continuous drain current is 200mA at ambient temperature.
The maximum on-resistance is 2.2Ω at Id=200mA and Vgs=4.5V.
The maximum gate threshold voltage is 800mV at Id=1mA.
The package is SOT-723 with supplier device package VMT3.
The maximum junction temperature is 150°C.
The input capacitance (Ciss) is 26pF at Vds=10V.