| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,300 pcs
|
2300 pcs | On Request | 1 | On Request | On Request | 15+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The ROHM Semiconductor RXH125N03TB1 is a single N-Channel MOSFET with a drain-source voltage (Vdss) of 30V. It is designed for surface mount applications and comes in an 8-SOP package.
Key electrical characteristics include a maximum continuous drain current of 12.5A (Ta) and a low on-resistance (Rds On) of 12mOhm at 12.5A and 10V gate-source voltage. The input capacitance (Ciss) is 1000 pF at 10V, and the gate charge (Qg) is 12.7 nC at 5V. The gate threshold voltage (Vgs(th)) is a maximum of 2.5V at 1mA.
This MOSFET operates within a temperature range of -150°C (TJ) and has a maximum power dissipation of 2W (Ta). The maximum gate-source voltage is ±20V. The technology used is MOSFET (Metal Oxide).
It is suitable for various electronic designs requiring a reliable N-Channel MOSFET in a compact surface mount package.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V.
12.5A at ambient temperature.
12mOhm at 12.5A drain current and 10V gate drive.
2.5V maximum at 1mA drain current.
8-SOIC (0.154", 3.90mm Width) surface mount package.
150°C.
12.7nC maximum at 5V gate-source voltage.