| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
7,015 pcs
|
7015 pcs | On Request | 1 | On Request | On Request | 1203+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The ROHM Semiconductor RW1C025ZPT2CR is a P-Channel MOSFET designed for surface mount applications. It offers a drain-to-source voltage (Vdss) of 20V and a maximum continuous drain current (Id) of 2.5A at ambient temperature. The MOSFET features a low on-resistance (Rds On) of 65mOhm at 2.5A and 4.5V gate-source voltage, with a gate threshold voltage (Vgs(th)) of 1V at 1mA.
With a maximum power dissipation of 700mW (Ta) and an operating temperature range up to 150°C (TJ), this component is suitable for various power management tasks. The package is a 6-SMD, Flat Leads (6-WEMT) type, requiring surface mounting. Key electrical characteristics include an input capacitance (Ciss) of 1300pF at 10V and a gate charge (Qg) of 21nC at 4.5V. The gate-to-source voltage (Vgs) maximum is ±10V.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
20V.
2.5A at ambient temperature.
65mOhm at 2.5A and 4.5V gate drive.
6-SMD flat leads package (6-WEMT) for surface mount.
Up to 150°C.
1V at 1mA drain current.
1300pF at 10V drain-source.