| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
40,000 pcs
|
40000 pcs | On Request | 1 | On Request | On Request | 1609+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The ROHM Semiconductor RW1A030APT2CR is a P-Channel MOSFET suitable for various electronic applications. It features a maximum drain-to-source voltage (Vdss) of 12V and can handle a continuous current of 3A at ambient temperature.
Key electrical characteristics include a maximum on-resistance (Rds On) of 42mOhm at 3A and 4.5V Vgs, an input capacitance (Ciss) of 2700pF at 6V Vds, and a gate charge (Qg) of 22nC at 4.5V Vgs. The gate threshold voltage (Vgs(th)) is a maximum of 1V at 1mA, with a maximum gate-source voltage (Vgs) of -8V.
This MOSFET operates within a temperature range of -150°C (TJ) and has a maximum power dissipation of 700mW at ambient temperature. It utilizes MOSFET (Metal Oxide) technology and comes in a 6-SMD, Flat Leads package, specifically the 6-WEMT supplier package, designed for surface mounting.
The device is specified with RoHS3 compliance, Moisture Sensitivity Level 1, and REACH Unaffected status, though these are currently unverified.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
12V.
6-WEMT surface mount package with flat leads.
150°C.
42mOhm at 3A drain current and 4.5V gate drive.
1V maximum at 1mA drain current.
3A at ambient temperature.