| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
16,000 pcs
|
16000 pcs | On Request | 1 | On Request | On Request | 1701+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The ROHM Semiconductor RV2C014BCT2CL is a P-Channel MOSFET with a drain-source voltage (Vdss) of 20V. It is designed for surface mount applications and comes in a compact DFN1006-3 package.
This MOSFET offers a continuous drain current of 700mA at ambient temperature and has a maximum power dissipation of 400mW. The gate-source voltage (Vgs) maximum is ±8V, with a gate threshold voltage (Vgs(th)) of 1V at 100µA. The on-resistance (Rds On) is a maximum of 300mOhm at 1.4A and 4.5V Vgs.
Operating temperature for this device ranges up to 150°C (TJ). The technology used is MOSFET (Metal Oxide). It is suitable for various electronic circuits requiring a P-channel enhancement mode MOSFET with moderate power handling capabilities.
Key electrical characteristics include an input capacitance (Ciss) of 100pF at 10V Vds. The drive voltage ranges from 1.8V to 4.5V for optimal Rds On performance.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
20V.
700mA.
300mOhm at 1.4A, 4.5V.
1V at 100µA.
Maximum junction temperature 150°C.
DFN1006-3 (3-XFDFN).
100pF at 10V.