| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,383 pcs
|
5383 pcs | On Request | 1 | On Request | On Request | 15+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The ROHM Semiconductor RV2C002UNT2L is a single N-Channel MOSFET designed for various electronic applications. It features a maximum drain-source voltage (Vdss) of 20V and a continuous drain current of 180mA at ambient temperature.
The MOSFET has a maximum on-resistance (Rds On) of 2 Ohms when driven at 150mA and 4.5V gate-source voltage. The gate threshold voltage (Vgs(th)) is a maximum of 1V at 100µA. Input capacitance (Ciss) is 12pF at 10V.
This device operates within a temperature range of -40°C to 150°C (TJ) and has a maximum power dissipation of 100mW (Ta). It is housed in a compact SC-101, SOT-883 package, suitable for surface mounting.
The RV2C002UNT2L is RoHS3 compliant and has an MSL of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
20V.
SC-101 and SOT-883 packages.
150°C.
N-Channel.
180mA at ambient temperature.
2 Ohm maximum at 150mA and 4.5V gate drive.
12pF at 10V drain-source voltage.