| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,843 pcs
|
2843 pcs | On Request | 1 | On Request | On Request | 15+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The ROHM Semiconductor RV2C001ZPT2L is a P-Channel MOSFET designed for various electronic applications. It features a maximum drain-source voltage (Vdss) of 20V and a continuous drain current (Id) of 100mA at ambient temperature.
This MOSFET has a gate-source threshold voltage (Vgs(th)) of 1V at 100µA and a maximum gate-source voltage (Vgs) of ±10V. The on-resistance (Rds On) is a maximum of 3.8 Ohms at 100mA and 4.5V gate-source voltage. It operates within a temperature range of -40°C to 150°C (TJ) and has a maximum power dissipation of 100mW (Ta).
The device is housed in a SC-101, SOT-883 package and is suitable for surface mounting. Its technology is based on Metal Oxide Semiconductor Field-Effect Transistor (MOSFET) principles.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
20V.
100mA.
3.8 Ohm maximum at 100mA drain current and 4.5V gate drive.
1V maximum at 100µA drain current.
Maximum junction temperature is 150°C.
SC-101, SOT-883 (supplier device package VML1006).
15pF at 10V drain-source voltage.