| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
8,000 pcs
|
8000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
560 pcs
|
560 pcs | On Request | 1 | On Request | On Request | 1834+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The ROHM Semiconductor RV1C002UNT2CL is a single N-Channel MOSFET designed for surface mount applications. It features a maximum drain-to-source voltage (Vdss) of 20V and a continuous current rating of 150mA at ambient temperature.
This MOSFET utilizes Metal Oxide Semiconductor technology. Key electrical characteristics include a gate threshold voltage (Vgs(th)) of 1V at 100µA and a maximum on-resistance (Rds On) of 2 Ohms at 150mA and 4.5V gate-source voltage. The maximum gate-to-source voltage is ±8V.
Packaged in a VML0806, 3-SMD, No Lead configuration, the RV1C002UNT2CL has a maximum power dissipation of 100mW (Ta) and an operating temperature range of -150°C (TJ). It is suitable for various low-power switching and amplification applications where space is a constraint.
Compliance information indicates RoHS3 compliance and MSL 1 rating. The device is designed for general-purpose use in electronic circuits requiring a small-signal N-channel MOSFET.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
20V.
150mA at ambient temperature.
2 Ohms at 150mA drain current and 4.5V gate-source voltage.
VML0806 (3-SMD, no lead) surface-mount package.
150°C.
Maximum 1V at 100µA drain current.