| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
15,000 pcs
|
15000 pcs | On Request | 1 | On Request | On Request | 13+14+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The RUS100N02TB is an N-Channel power MOSFET manufactured by ROHM Semiconductor using Metal Oxide technology. It is designed for switching applications requiring efficient power management in a compact surface-mount package.
Key electrical specifications include a maximum drain to source voltage (Vdss) of 20V and a continuous drain current rating of 10A at ambient temperature. The device features a low maximum on-resistance of 12mOhm at a drain current of 10A and gate to source voltage of 4.5V. The gate threshold voltage is 1V maximum at 1mA drain current, and the maximum gate charge is 24nC at 4.5V Vgs. Input capacitance is 2250pF at 10V Vds.
The RUS100N02TB is supplied in an 8-SOP (8-SOIC) surface-mount package with a 0.154 inch body width. Maximum power dissipation is 2W at ambient temperature, and the maximum junction temperature is 150°C. The device supports drive voltages of 1.5V and 4.5V for minimum and maximum Rds on operation.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain to source voltage (Vdss) is 20V.
The maximum continuous drain current is 10A at ambient temperature.
The maximum on-resistance (Rds on) is 12mOhm at a drain current of 10A and gate to source voltage of 4.5V.
The maximum junction temperature is 150°C.
The RUS100N02TB is available in an 8-SOIC (0.154", 3.90mm Width) surface-mount package, also known as 8-SOP.
The maximum gate charge (Qg) is 24nC at a gate to source voltage of 4.5V.
The maximum input capacitance (Ciss) is 2250pF at a drain to source voltage of 10V.