| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
120 pcs
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120 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The RUR020N02TL is a single N-Channel MOSFET manufactured by ROHM Semiconductor. It features a maximum drain-source voltage (Vdss) of 20V and a continuous drain current (Ta) of 2A. The on-resistance (Rds On) is a maximum of 105mOhm at 2A and 4.5V gate-source voltage. The device operates at temperatures up to 150°C (TJ) and has a maximum power dissipation of 540mW (Ta).
This MOSFET is housed in a SC-96 package, also known as TSMT3, and is designed for surface mount applications. Key electrical characteristics include an input capacitance (Ciss) of 180pF at 10V and a gate charge (Qg) of 2nC at 4.5V. The gate-source voltage (Vgs) maximum is ±10V, with a gate threshold voltage (Vgs(th)) of 1V at 1mA. The drive voltage ranges from 1.5V to 4.5V for optimal Rds On performance.
This component is suitable for various electronic switching applications where a compact, surface-mount N-channel MOSFET is required. Its specifications make it a viable option for power management and signal switching circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 20 V.
The continuous drain current is 2 A at ambient temperature.
The maximum on-resistance is 105 mΩ at Id=2A and Vgs=4.5V.
Maximum input capacitance is 180 pF at Vds=10V.
Maximum gate charge is 2 nC at Vgs=4.5V.
Maximum junction temperature is 150°C.
The device is housed in an SC-96 package with a TSMT3 supplier device package, for surface-mount installation.