Mfr Part #:

RUM003N02T2L

Mfr Name: ROM

The RUM003N02T2L is an N-channel MOSFET from ROHM Semiconductor designed for switching applications. It offers low on-resistance and fast switching speeds.

✓ Total Stock: 6,570 pcs

RUM003N02T2L Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Optech Co.,Limited ✓ Non-Authorised Inventory information	6,570 pcs On Request	6570 pcs	On Request	1	On Request	On Request	22+	On Request	On Request

RUM003N02T2L Specifications Quick View

Most important parameters for selection – full specs in datasheet.

SELECT ALL

Category	New Products
Manufacturer Name	ROM
Forward Voltage	1.2V
Input Capacitance	25pF
Lead Style	Smd
Mounting Type	Surface Mount
Storage Temperature	-55°C ~ 150°C

View Similar Products (0)

RUM003N02T2L Description

Short technical summary and product information.

The RUM003N02T2L is a silicon N-channel MOSFET from ROHM Semiconductor, suitable for switching applications. It features a low on-resistance and fast switching speed, making it ideal for portable equipment due to its low voltage drive capability of 1.8V. The device simplifies drive circuits and allows for easy parallel use.

Key electrical characteristics include a Drain-Source Breakdown Voltage of 20V and a Gate Threshold Voltage of 0.3V. The Static Drain-Source On-State Resistance is specified at a maximum of 1.4 Ohms at 300mA and 4.0V gate drive, and 1.0 Ohm at 300mA and 2.5V gate drive. Capacitance values such as Input Capacitance (Ciss) are typically 25pF, Output Capacitance (Coss) at 10pF, and Reverse Transfer Capacitance (Crss) at 10pF, measured at 1MHz.

Switching performance is characterized by a typical Turn-on Delay Time of 5ns, Rise Time of 10ns, Turn-off Delay Time of 15ns, and Fall Time of 10ns. The MOSFET also includes an ESD protection diode and a body diode with a typical forward voltage of 1.2V at 100mA.

Packaged in a VMT3 surface-mount package, the RUM003N02T2L has a standard order unit of 8000 pieces. Absolute maximum ratings include a Drain-Source Voltage of 20V and a Gate-Source Voltage of ±8V. The continuous Drain Current is 300mA, with a pulsed capability of 600mA. Power dissipation is rated at 150mW, with a channel temperature limit of 150°C and a storage temperature range of -55°C to +150°C.

RUM003N02T2L Quick Information

Product Type: MOSFET

Series: RUM

Canonical Name: RUM003N02T2L N-Channel MOSFET

Subcategory: Single

RUM003N02T2L Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

RUM003N02T2L Features

Low on-resistance for efficient switching.
Fast switching speed reduces power loss.
1.8V low voltage drive capability.
Ideal for portable equipment applications.
Simple drive circuits and easy parallel use.

RUM003N02T2L Applications

Suitable for general switching tasks.
Designed for portable electronic devices.
Used in power management circuits.
Applicable where low voltage drive is needed.

RUM003N02T2L FAQs

6 frequently asked questions generated from this part’s specifications.

What is the Drain-Source Breakdown Voltage of the RUM003N02T2L?

The Drain-Source Breakdown Voltage (V DSS) is a minimum of 20V.

What is the typical Gate Threshold Voltage for this MOSFET?

The typical Gate Threshold Voltage (VGS(th)) is 0.3V.

What is the maximum Static Drain-Source On-State Resistance at 300mA and 4.0V gate drive?

The maximum Static Drain-Source On-State Resistance (RDS(on)) is 1.4 Ohms.

What are the typical switching times for the RUM003N02T2L?

Typical switching times include a Turn-on Delay Time of 5ns, Rise Time of 10ns, Turn-off Delay Time of 15ns, and Fall Time of 10ns.

What is the package type for the RUM003N02T2L?

The RUM003N02T2L is supplied in the VMT3 package.

What is the standard package quantity for this part?

The standard ordering unit is 8000 pieces.