RUM003N02T2L The ROHM Semiconductor RUM003N02T2L is an N-Channel MOSFET with a 20V drain-source voltage and 300mA continuous current. It is designed for low voltage drive applications.
Mfr Part #:

RUM003N02T2L

Available from 2 distributors
Mfr Name: ROHM Semiconductor
ROHM Semiconductor
The ROHM Semiconductor RUM003N02T2L is an N-Channel MOSFET with a 20V drain-source voltage and 300mA continuous current. It is designed for low voltage drive applications.
✓ Total Stock: 102,945 pcs
$ Price Range: $0.99

RUM003N02T2L Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
102,095 pcs
102095 pcs On Request 1 On Request On Request 21+ On Request On Request
Non-Authorised Inventory information
850 pcs
850 pcs On Request 1 On Request On Request On Request On Request On Request

RUM003N02T2L Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

RUM003N02T2L Description

Short technical summary and product information.

The RUM003N02T2L from ROHM Semiconductor is a silicon N-channel MOSFET designed for switching applications. It features a low on-resistance and fast switching speed, making it suitable for portable equipment due to its low voltage drive capability of 1.8V.

 

Key electrical specifications include a drain-source breakdown voltage of 20V and a continuous drain current of 300mA at 25°C. The gate threshold voltage is 1V at 1mA, and the static drain-source on-state resistance is a maximum of 1 Ohm at 300mA and 4V Vgs. Input capacitance is 25pF at 10V.

 

This MOSFET has a maximum power dissipation of 150mW at 25°C and an operating temperature range up to 150°C. It is housed in a VMT3 package, which is a SOT-723 surface mount type.

 

The device offers simple drive circuits and is easy to use in parallel configurations. Its features make it ideal for various portable electronic devices and switching circuits.

RUM003N02T2L Quick Information

Product Type: MOSFET
Canonical Name: RUM003N02T2L N-Channel MOSFET
Subcategory: Single MOSFETs

RUM003N02T2L Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

RUM003N02T2L Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

RUM003N02T2L Features

  • N-Channel MOSFET for switching applications.
  • Low voltage drive capability at 1.8V.
  • 20V drain-source breakdown voltage.
  • 300mA continuous drain current.
  • Surface mount SOT-723 package.

RUM003N02T2L Applications

  • Ideal for portable equipment.
  • Suitable for switching circuits.
  • Simple drive circuit designs.
  • Easy parallel device usage.

RUM003N02T2L FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage for the RUM003N02T2L?

The drain-source breakdown voltage is 20V.

What is the maximum continuous drain current?

The maximum continuous drain current is 300mA.

What is the gate threshold voltage?

The gate threshold voltage is 1V at 1mA.

What is the static drain-source on-state resistance?

The static drain-source on-state resistance is a maximum of 1 Ohm at 300mA and 4V Vgs.

What is the drive voltage for this MOSFET?

The drive voltage is 1.8V for maximum on-resistance and 4V for minimum on-resistance.

What package type is the RUM003N02T2L in?

It is in a VMT3 package, which is a SOT-723 surface mount type.

What is the RoHS status of this component?

The RoHS status is RoHS3 Compliant.

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