| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
16,000 pcs
|
16000 pcs | On Request | 1 | On Request | On Request | 21+20+ | On Request | On Request | |
|
100 pcs
|
100 pcs | On Request | 1 | On Request | On Request | 2026-02-25 06:16:38 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The RUM002N05T2L from ROHM Semiconductor is a single N-Channel MOSFET. It is designed for surface mount applications and comes in a SOT-723 package.
Key electrical specifications include a drain-to-source voltage (Vdss) of 50V and a continuous current rating of 200mA at ambient temperature. The gate-source threshold voltage (Vgs(th)) is a maximum of 1V at 1mA, with a maximum gate-source voltage (Vgs) of ±8V. The on-resistance (Rds On) is a maximum of 2.2 Ohms at 200mA and 4.5V gate-source voltage. Input capacitance (Ciss) is 25 pF at 10V.
This MOSFET operates within a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 150mW at ambient temperature. The technology used is MOSFET (Metal Oxide).
It is suitable for various electronic circuits requiring a small-signal N-channel MOSFET in a compact surface-mount package.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
50V.
SOT-723 (supplier package VMT3).
150°C junction temperature.
1V max at 1mA drain current.
2.2 Ohm max at 200mA and 4.5V gate drive.
25pF at 10V drain-source voltage.
150mW.