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RUM002N02T2L The ROHM Semiconductor RUM002N02T2L is an N-Channel MOSFET with a 20V drain-source voltage rating and 200mA current capability. It is housed in a SOT-723 package.
Mfr Part #:

RUM002N02T2L

Available from 2 distributors
Mfr Name: ROHM Semiconductor
ROHM Semiconductor
The ROHM Semiconductor RUM002N02T2L is an N-Channel MOSFET with a 20V drain-source voltage rating and 200mA current capability. It is housed in a SOT-723 package.
✓ Total Stock: 178,173 pcs
$ Price Range: $0.99

RUM002N02T2L Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Smaxon Electronics ✓
Non-Authorised Inventory information
175,457 pcs
On Request
175457 pcs On Request 1 On Request On Request 21+ On Request On Request
Bristol Electronics ✓
Non-Authorised Inventory information
2,716 pcs
On Request
2716 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

RUM002N02T2L Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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RUM002N02T2L Description

Short technical summary and product information.

The RUM002N02T2L from ROHM Semiconductor is a single N-Channel MOSFET designed for surface mount applications. It features a drain-to-source voltage (Vdss) of 20V and can handle a continuous current of 200mA at ambient temperature.

 

Key electrical characteristics include a maximum on-resistance (Rds On) of 1.2 Ohms at 200mA and 2.5V gate-source voltage. The gate threshold voltage (Vgs(th)) is 1V maximum at 1mA, and the maximum gate-source voltage is ±8V. Input capacitance (Ciss) is rated at 25pF at 10V.

 

This MOSFET operates at temperatures up to 150°C (TJ) and has a maximum power dissipation of 150mW (Ta). It utilizes MOSFET (Metal Oxide) technology and is supplied in a compact SOT-723 package, suitable for space-constrained designs. The mounting type is surface mount.

RUM002N02T2L Quick Information

Product Type: MOSFET
Canonical Name: RUM002N02T2L N-Channel MOSFET
Subcategory: Single N-Channel

RUM002N02T2L Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

RUM002N02T2L Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

RUM002N02T2L Features

  • 20V drain-source voltage rating.
  • 200mA continuous current capability.
  • 1.2 Ohm maximum on-resistance.
  • Compact SOT-723 surface mount package.
  • Operates up to 150°C.

RUM002N02T2L Applications

  • Ideal for low-power switching circuits.
  • Suitable for portable electronic devices.
  • Used in battery-powered applications.
  • General purpose signal switching.

RUM002N02T2L FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the RUM002N02T2L MOSFET?

The maximum drain-source voltage (Vdss) for the RUM002N02T2L is 20V.

What is the continuous current rating of the RUM002N02T2L MOSFET?

The RUM002N02T2L MOSFET has a continuous current rating of 200mA at ambient temperature.

What is the maximum on-resistance of the RUM002N02T2L MOSFET?

The maximum on-resistance (Rds On) for the RUM002N02T2L is 1.2 Ohms when operating at 200mA and 2.5V gate-source voltage.

What package type is the RUM002N02T2L MOSFET supplied in?

The RUM002N02T2L MOSFET is supplied in a SOT-723 package.

What is the operating temperature range for the RUM002N02T2L MOSFET?

The RUM002N02T2L MOSFET can operate at temperatures up to 150°C (TJ).

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