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RUM002N02 The ROHM Semiconductor RUM002N02 is an N-channel MOSFET designed for small signal applications. It features a 20V drain-source voltage and a 200mA continuous drain current.
Mfr Part #:

RUM002N02

Available from 1 distributors
Mfr Name: ROHM Semiconductor
ROHM Semiconductor
The ROHM Semiconductor RUM002N02 is an N-channel MOSFET designed for small signal applications. It features a 20V drain-source voltage and a 200mA continuous drain current.
✓ Total Stock: 2,860 pcs

RUM002N02 Available from 1 distributor

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Optech Co.,Limited ✓
Non-Authorised Inventory information
2,860 pcs
On Request
2860 pcs On Request 1 On Request On Request 15+ On Request On Request
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RUM002N02 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Continuous Forward Current
Forward Voltage
Halogen Free
Input Capacitance
Junction Temperature
Mounting Type
Package / Case
Power Dissipation
Tape & Reel
Tape Width
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RUM002N02 Description

Short technical summary and product information.

The ROHM Semiconductor RUM002N02 is a small-signal N-channel MOSFET. It offers a drain-source voltage (VDSS) of 20V and a continuous drain current (ID) of ±200mA. The device is housed in a compact SOT-723 package, making it suitable for space-constrained applications.

 

Key electrical characteristics include a typical static drain-source on-state resistance (RDS(on)) of 0.8Ω at VGS = 2.5V and ID = 200mA. The gate threshold voltage (VGS(th)) ranges from 0.3V to 1.0V. It supports ultra-low voltage drive capabilities, down to 1.2V.

 

This MOSFET is Pb-free and RoHS compliant, with halogen-free materials used. It is supplied on tape and reel for automated assembly processes.

 

Applications include general switching and signal amplification where a small, low-voltage N-channel MOSFET is required.

RUM002N02 Quick Information

Product Type: MOSFET
Canonical Name: RUM002N02 N-Channel MOSFET
Subcategory: N-Channel

RUM002N02 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-free lead plating

RUM002N02 Features

  • 20V drain-source voltage rating.
  • 200mA continuous drain current.
  • Ultra low voltage drive (1.2V).
  • Compact SOT-723 package.
  • RoHS compliant and halogen free.

RUM002N02 Applications

  • Suitable for small signal switching.
  • Ideal for low voltage applications.
  • Used in space-constrained designs.
  • General purpose N-channel MOSFET.

RUM002N02 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the RUM002N02?

20 V.

What is the continuous drain current rating?

±200 mA at 25°C.

What is the package type?

SOT-723.

What is the operating temperature range?

-55 to +150 °C.

What is the typical gate threshold voltage?

0.65 V (range 0.3 to 1.0 V).

What is the typical on-resistance at 2.5V gate drive?

0.8 Ω.

Is the device lead-free?

Yes, it has lead-free plating.

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