RUM001L02T2CL The ROHM Semiconductor RUM001L02T2CL is an N-Channel MOSFET with a 20V drain-to-source voltage and 100mA current rating. It is supplied in a surface-mount SOT-723 package.
Mfr Part #:

RUM001L02T2CL

Available from 4 distributors
Mfr Name: ROHM Semiconductor
ROHM Semiconductor
The ROHM Semiconductor RUM001L02T2CL is an N-Channel MOSFET with a 20V drain-to-source voltage and 100mA current rating. It is supplied in a surface-mount SOT-723 package.
✓ Total Stock: 18,142 pcs
$ Price Range: $0.99

RUM001L02T2CL Available from 4 distributors

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14,000 pcs
14000 pcs On Request 1 On Request On Request 21+ On Request On Request
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2,468 pcs
2468 pcs On Request 1 On Request On Request On Request On Request On Request
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1,646 pcs
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28 pcs
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RUM001L02T2CL Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

RUM001L02T2CL Description

Short technical summary and product information.

The RUM001L02T2CL from ROHM Semiconductor is a single N-Channel MOSFET designed for various electronic applications. It features a maximum drain-to-source voltage (Vdss) of 20V and a continuous drain current of 100mA at 25°C ambient temperature.

 

The MOSFET utilizes Metal Oxide Semiconductor technology. Its on-state resistance (Rds On) is a maximum of 3.5 Ohms at a gate-to-source voltage (Vgs) of 4.5V and a drain current (Id) of 100mA. The gate threshold voltage (Vgs(th)) is a maximum of 1V at 100µA.

 

This component has a maximum power dissipation of 150mW at 25°C and an operating junction temperature up to 150°C. It is packaged in a VMT3 (SOT-723) case and designed for surface mounting.

 

The RUM001L02T2CL has a gate-to-source voltage limit of ±8V. Its input capacitance (Ciss) is 7.1 pF at 10V.

RUM001L02T2CL Quick Information

Product Type: MOSFET
Canonical Name: RUM001L02T2CL N-Channel MOSFET
Subcategory: Single N-Channel

RUM001L02T2CL Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

RUM001L02T2CL Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

RUM001L02T2CL Features

  • N-Channel MOSFET technology.
  • 20V drain-to-source voltage.
  • 100mA continuous drain current.
  • Surface mount SOT-723 package.
  • 150°C maximum operating temperature.

RUM001L02T2CL Applications

  • Used in portable battery management systems
  • Suitable for load switching applications
  • Ideal for low-power DC-DC converters
  • Used in signal switching circuits
  • Applicable for logic-level interfacing

RUM001L02T2CL FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the RUM001L02T2CL?

The maximum drain-to-source voltage is 20V.

What is the continuous drain current of this MOSFET?

The continuous drain current is 100mA at 25°C ambient temperature.

What package does the RUM001L02T2CL come in?

It is available in a surface-mount SOT-723 package with a VMT3 supplier device package.

What is the operating temperature range for this device?

The maximum junction temperature is 150°C.

What is the gate threshold voltage of the RUM001L02T2CL?

The maximum gate threshold voltage is 1V at a drain current of 100µA.

What is the on-resistance of this MOSFET?

The maximum on-state resistance is 3.5 Ohms at 100mA drain current and 4.5V gate-source voltage.

What is the input capacitance of the RUM001L02T2CL?

The maximum input capacitance is 7.1pF at 10V drain-source voltage.

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