| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
14,000 pcs
|
14000 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
|
2,468 pcs
|
2468 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,646 pcs
|
1646 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
28 pcs
|
28 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The RUM001L02T2CL from ROHM Semiconductor is a single N-Channel MOSFET designed for various electronic applications. It features a maximum drain-to-source voltage (Vdss) of 20V and a continuous drain current of 100mA at 25°C ambient temperature.
The MOSFET utilizes Metal Oxide Semiconductor technology. Its on-state resistance (Rds On) is a maximum of 3.5 Ohms at a gate-to-source voltage (Vgs) of 4.5V and a drain current (Id) of 100mA. The gate threshold voltage (Vgs(th)) is a maximum of 1V at 100µA.
This component has a maximum power dissipation of 150mW at 25°C and an operating junction temperature up to 150°C. It is packaged in a VMT3 (SOT-723) case and designed for surface mounting.
The RUM001L02T2CL has a gate-to-source voltage limit of ±8V. Its input capacitance (Ciss) is 7.1 pF at 10V.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage is 20V.
The continuous drain current is 100mA at 25°C ambient temperature.
It is available in a surface-mount SOT-723 package with a VMT3 supplier device package.
The maximum junction temperature is 150°C.
The maximum gate threshold voltage is 1V at a drain current of 100µA.
The maximum on-state resistance is 3.5 Ohms at 100mA drain current and 4.5V gate-source voltage.
The maximum input capacitance is 7.1pF at 10V drain-source voltage.