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RUF015N02TL The ROHM Semiconductor RUF015N02TL is an N-Channel MOSFET designed for various applications. It offers a 20V drain-source voltage and 1.5A continuous current.
Mfr Part #:

RUF015N02TL

Available from 1 distributors
Mfr Name: ROHM Semiconductor
ROHM Semiconductor
The ROHM Semiconductor RUF015N02TL is an N-Channel MOSFET designed for various applications. It offers a 20V drain-source voltage and 1.5A continuous current.
✓ Total Stock: 5,100 pcs
$ Price Range: $0.99

RUF015N02TL Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Optech Co.,Limited ✓
Non-Authorised Inventory information
5,100 pcs
On Request
5100 pcs On Request 1 On Request On Request 2016 On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

RUF015N02TL Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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RUF015N02TL Description

Short technical summary and product information.

The RUF015N02TL from ROHM Semiconductor is a single N-Channel MOSFET. It features a drain-to-source voltage (Vdss) of 20V and a continuous drain current (Id) of 1.5A at ambient temperature.

 

This MOSFET utilizes Metal Oxide Semiconductor (MOS) technology. Key electrical characteristics include a maximum on-state resistance (Rds On) of 180mOhm at 1.5A and 4.5V Vgs, a gate threshold voltage (Vgs(th)) of 1V at 1mA, and a maximum gate-to-source voltage (Vgs) of ±10V. Input capacitance (Ciss) is 110pF at 10V Vds, and gate charge (Qg) is 2.5nC at 4.5V Vgs.

 

The device has a maximum power dissipation of 800mW at ambient temperature and an operating junction temperature range of 150°C. It is supplied in a TUMT3 package with a Surface Mount type and flat leads.

 

This component is suitable for applications requiring a compact and efficient N-channel MOSFET. Its specifications make it a viable option for power switching and general-purpose amplification tasks within its voltage and current ratings.

RUF015N02TL Quick Information

Product Type: MOSFET
Canonical Name: RUF015N02TL N-Channel MOSFET
Subcategory: N-Channel

RUF015N02TL Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

RUF015N02TL Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

RUF015N02TL Features

  • N-Channel MOSFET with 20V drain-source voltage.
  • 1.5A continuous drain current capability.
  • Low 180mOhm maximum on-state resistance.
  • Surface Mount TUMT3 package for compact designs.
  • Operates up to 150°C junction temperature.

RUF015N02TL Applications

  • Suitable for general purpose switching.
  • Ideal for low-power circuit applications.
  • Used in compact electronic designs.
  • Power management applications.

RUF015N02TL FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage rating?

20 volts.

What package type does this component use?

TUMT3 surface-mount package with three flat leads.

What is the maximum operating junction temperature?

150 degrees Celsius.

What is the maximum gate threshold voltage?

1 volt at a drain current of 1 milliampere.

How much gate charge does the device require?

Maximum 2.5 nanocoulombs at a gate-source voltage of 4.5 volts.

What is the continuous drain current rating?

1.5 amperes at ambient temperature conditions.

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