| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
32,466 pcs
|
32466 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
6,875 pcs
|
6875 pcs | On Request | 1 | On Request | On Request | 17+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The ROHM Semiconductor RUE003N02TL is a silicon N-channel MOSFET ideal for switching applications. It offers low on-resistance and fast switching speeds, making it suitable for portable equipment due to its low voltage drive capability (1.8V).
Key electrical specifications include a 20V drain-source voltage (Vdss), a maximum continuous drain current of 300mA at 25°C ambient temperature, and a maximum power dissipation of 150mW. The gate threshold voltage (Vgs(th)) is 1V at 1mA, and the static drain-source on-state resistance (Rds(on)) is a maximum of 1 Ohm at 300mA and 4V gate-source voltage. Input capacitance (Ciss) is 25pF at 10V.
This MOSFET is housed in an EMT3 package, which is a surface-mount type. The operating temperature range is up to 150°C (TJ). Its features include simple drive circuits and ease of parallel use.
Applications for this device include general switching functions where low on-resistance and efficient performance are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 20V.
The maximum continuous drain current is 300mA at 25°C ambient temperature.
The maximum on-resistance is 1Ohm at 300mA drain current and 4V gate-source voltage.
The maximum junction temperature is 150°C.
It is available in the SC-75 (SOT-416) surface-mount package, also designated as EMT3.
The maximum gate threshold voltage is 1V at 1mA drain current.
The typical input capacitance is 25pF at 10V drain-source voltage.