| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
20,500 pcs
|
20500 pcs | On Request | 1 | On Request | On Request | 20+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The RUC002N05T116 from ROHM Semiconductor is a single N-Channel MOSFET designed for various electronic applications. It offers a drain-to-source voltage (Vdss) of 50V and a continuous drain current of 200mA at ambient temperature.
This MOSFET utilizes MOSFET technology and is suitable for surface mounting, with the package specified as TO-236-3, SC-59, or SOT-23-3. The operating temperature range is from -55°C to 150°C (TJ).
Key electrical characteristics include a maximum on-resistance (Rds On) of 2.2 Ohms at 200mA and 4.5V, a gate threshold voltage (Vgs(th)) of 1V at 1mA, and a maximum gate-source voltage of ±8V. The input capacitance (Ciss) is 25 pF at 10V.
With a maximum power dissipation of 200mW (Ta), this component is designed for applications requiring efficient switching and amplification. It is RoHS3 compliant, has an MSL rating of 1, and is REACH unaffected.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
50V maximum.
It is available in TO-236-3, SC-59, and SOT-23-3 surface mount packages.
150°C.
1V maximum at 1mA drain current.
2.2 Ohm maximum at 200mA and 4.5V gate drive.
25 pF at 10V drain-source voltage.
200mW at ambient temperature.