| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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3,402 pcs
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3402 pcs | On Request | 1 | On Request | On Request | 16+ | On Request | On Request | |
|
2,006 pcs
|
2006 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
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| Power Dissipation |
The RU30L30M is a P-Channel Advanced Power MOSFET from Ruichips, designed for power management applications. This component offers a Drain-Source Voltage of 30V and a Continuous Drain Current of 35A, making it suitable for various switching and amplification tasks.
Key electrical characteristics include an On-Resistance of 7.5mΩ at 10V and 14.4A, and a Power Dissipation rating of 52.1W. The Gate-Source Leakage Current is specified at 2.8V with a 250uA current.
The RU30L30M is housed in a compact QFN-8(3x3) package, suitable for surface mounting. Its specifications indicate suitability for applications requiring efficient power handling and a small footprint.
The Drain-Source Voltage for the RU30L30M is 30V.
The Continuous Drain Current for the RU30L30M is 35A.
The typical On-Resistance of the RU30L30M is 7.5mΩ at 10V and 14.4A.
The RU30L30M is supplied in a QFN-8(3x3) package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.
The REACH status is REACH Unaffected.