| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3,421 pcs
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3421 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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1,580 pcs
|
1580 pcs | On Request | 1 | On Request | On Request | 16+ | On Request | On Request |
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The RU3030M2 is an N-Channel Advanced Power MOSFET from Rockchip, designed for various electronic applications. This component offers a drain-to-source voltage rating of 30V.
It is manufactured using advanced MOSFET technology, ensuring efficient power handling. The device is housed in a compact QFN-8(3x3) package, suitable for space-constrained designs.
The RU3030M2 is specified as RoHS3 Compliant, indicating adherence to environmental standards. Its Moisture Sensitivity Level (MSL) is rated as 1 Unlimited, and it is REACH Unaffected.
This MOSFET is part of Rockchip's line of power semiconductor devices, with similar parts available from the manufacturer for alternative or complementary applications.
The drain-to-source voltage for the RU3030M2 is 30V.
The RU3030M2 is an N-Channel Advanced Power MOSFET.
The RU3030M2 is in a QFN-8(3x3) package.
The RU3030M2 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the RU3030M2 is 1 Unlimited.