| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,000 pcs
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2000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The RU1J002YNTCL from ROHM Semiconductor is a single N-Channel MOSFET designed for various electronic applications. It features a maximum drain-source voltage of 50V and can handle a continuous drain current of 200mA at ambient temperature.
Key electrical characteristics include a maximum on-resistance of 2.2 Ohms at 200mA and 4.5V, an input capacitance of 26pF at 10V, and a gate threshold voltage of 800mV at 1mA. The MOSFET operates at temperatures up to 150°C (TJ).
This component utilizes Metal Oxide Semiconductor (MOSFET) technology and is packaged in an SC-85 surface-mount case, identified by the supplier device package UMT3F. Its mounting type is surface mount, making it suitable for compact PCB designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage is 50V.
The maximum continuous drain current is 200mA at ambient temperature.
The maximum on-resistance is 2.2 Ohm at 200mA drain current and 4.5V gate-source voltage.
The maximum gate threshold voltage is 800mV at 1mA drain current.
The device is available in an SC-85 surface-mount package with supplier device package UMT3F.
The maximum operating junction temperature is 150°C.
The maximum gate-source voltage is ±8V.