RU1C001UNTCL The ROHM Semiconductor RU1C001UNTCL is an N-Channel MOSFET designed for various electronic applications. It features a 20V drain-to-source voltage and a continuous drain current of 100mA.
Mfr Part #:

RU1C001UNTCL

Available from 2 distributors
Mfr Name: ROHM Semiconductor
ROHM Semiconductor
The ROHM Semiconductor RU1C001UNTCL is an N-Channel MOSFET designed for various electronic applications. It features a 20V drain-to-source voltage and a continuous drain current of 100mA.
✓ Total Stock: 5,178 pcs
$ Price Range: $0.99

RU1C001UNTCL Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
2,890 pcs
2890 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
2,288 pcs
2288 pcs On Request 1 On Request On Request 19+ On Request On Request

RU1C001UNTCL Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

RU1C001UNTCL Description

Short technical summary and product information.

The ROHM Semiconductor RU1C001UNTCL is a single N-Channel MOSFET with a maximum drain-to-source voltage of 20V and a continuous drain current of 100mA at 25°C ambient temperature. It offers a low on-resistance of 3.5 Ohms maximum at 100mA and 4.5V gate-to-source voltage.

 

This MOSFET utilizes Metal Oxide Semiconductor technology and is housed in an SC-85 package, suitable for surface mount applications. The operating temperature range is up to 150°C (TJ), and it has a maximum power dissipation of 150mW (Ta).

 

Key electrical characteristics include a gate threshold voltage of 1V maximum at 100µA and an input capacitance of 7.1 pF maximum at 10V drain-to-source voltage. The maximum gate-to-source voltage is ±12V.

 

This component is RoHS3 compliant, has an MSL rating of 1, and is REACH unaffected. Its compact size and electrical specifications make it suitable for general-purpose switching and amplification tasks in electronic circuits.

RU1C001UNTCL Quick Information

Product Type: MOSFET
Canonical Name: RU1C001UNTCL N-Channel MOSFET
Subcategory: N-Channel

RU1C001UNTCL Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

RU1C001UNTCL Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

RU1C001UNTCL Features

  • N-Channel MOSFET technology.
  • 20V drain-to-source voltage.
  • 100mA continuous drain current.
  • 3.5 Ohm maximum on-resistance.
  • SC-85 surface mount package.

RU1C001UNTCL Applications

  • Useful in low-voltage load switching.
  • Suitable for portable battery-powered devices.
  • Supports logic-level gate drive circuits.
  • Can be used for small-signal switching.

RU1C001UNTCL FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage rating of RU1C001UNTCL?

20V maximum.

What is the package type of RU1C001UNTCL?

SC-85, with supplier device package UMT3F (surface mount).

What is the maximum continuous drain current?

100mA at 25°C ambient.

What is the maximum on-resistance?

3.5Ω maximum at 100mA drain current and 4.5V gate-source voltage.

What is the maximum gate threshold voltage?

1V maximum at 100µA drain current.

What is the maximum gate-source voltage?

±12V maximum.

What is the maximum operating junction temperature?

150°C maximum.

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