RTU002P02T106 The ROHM Semiconductor RTU002P02T106 is a P-Channel MOSFET with a 20V drain-source voltage and 250mA continuous current rating. It is available in a UMT3 package for surface mounting.
Mfr Part #:

RTU002P02T106

Available from 2 distributors
Mfr Name: ROHM Semiconductor
ROHM Semiconductor
The ROHM Semiconductor RTU002P02T106 is a P-Channel MOSFET with a 20V drain-source voltage and 250mA continuous current rating. It is available in a UMT3 package for surface mounting.
✓ Total Stock: 50,330 pcs
$ Price Range: $0.99

RTU002P02T106 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
48,000 pcs
48000 pcs On Request 1 On Request On Request 1303+ On Request On Request
Non-Authorised Inventory information
2,330 pcs
2330 pcs On Request 1 On Request On Request 1124 On Request On Request

RTU002P02T106 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Forward Voltage
Halogen Free
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Tape & Reel
Technology
Thermal Resistance
Vgs (Max)
Vgs(th) (Max) @ Id

RTU002P02T106 Description

Short technical summary and product information.

The RTU002P02T106 from ROHM Semiconductor is a P-Channel MOSFET designed for switching applications. It features a maximum drain-source voltage (Vdss) of -20V and a continuous drain current (Id) of ±0.25A at 25°C. The device has a maximum power dissipation of 200mW (Ta) and operates at channel temperatures up to 150°C.

 

Key electrical characteristics include a gate threshold voltage (Vgs(th)) ranging from -0.7V to -2.0V, and a static drain-source on-state resistance (Rds(on)) of 1.5 Ohm maximum at 250mA and 4.5V gate-source voltage. Input capacitance (Ciss) is 50pF typical. The MOSFET is housed in a UMT3 package suitable for surface mounting.

 

This component is ideal for various switching applications where a compact P-Channel MOSFET is required. Its specifications make it suitable for general-purpose switching and power management tasks within its rated limits.

RTU002P02T106 Quick Information

Product Type: MOSFET
Canonical Name: RTU002P02T106 P-Channel MOSFET
Subcategory: P-Channel

RTU002P02T106 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: No

RTU002P02T106 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

RTU002P02T106 Features

  • P-Channel MOSFET for switching applications.
  • 20V drain-source voltage rating.
  • 250mA continuous drain current.
  • UMT3 surface mount package.
  • 1.5 Ohm maximum Rds(on).

RTU002P02T106 Applications

  • Load switching in portable electronics.
  • Power management for battery-powered devices.
  • Signal switching in low-voltage circuits.
  • DC-DC converter output disconnect.

RTU002P02T106 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage for the RTU002P02T106?

The drain-source voltage (Vdss) is -20V.

What is the maximum continuous drain current?

The maximum continuous drain current is 250mA at 25°C.

What is the Rds On for the RTU002P02T106?

The static drain-source on-state resistance is a maximum of 1.5 Ohm at 250mA and 4.5V.

What package type is the RTU002P02T106 in?

The RTU002P02T106 is available in the UMT3 package, which is suitable for surface mounting.

What is the operating temperature range?

The operating temperature range is -55°C to 150°C.

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