| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
33,392 pcs
|
33392 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The RTR040N03TL is an N-Channel power MOSFET manufactured by ROHM Semiconductor using MOSFET (Metal Oxide) technology. It is designed for switching applications requiring a maximum drain to source voltage of 30V and a continuous drain current of 4A at ambient temperature.
The device offers a maximum on-resistance of 48mOhm at a gate drive of 4.5V and 4A drain current, with a gate threshold voltage of 1.5V at 1mA. It supports drive voltages of 2.5V and 4.5V for flexible logic-level control. The input capacitance is 475pF at 10V drain-source voltage, and the total gate charge is 8.3nC at 4.5V gate-source voltage.
Packaged in a surface mount SC-96 (TSMT3) package, the RTR040N03TL is suitable for compact PCB designs. The maximum power dissipation is 1W at ambient temperature, and the junction temperature can reach up to 150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V.
4A at ambient temperature.
48mOhm maximum at 4A drain current and 4.5V gate-source voltage.
SC-96 (TSMT3) surface mount package.
150°C.
1.5V maximum at 1mA drain current.
475pF maximum at 10V drain-source voltage.