| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
10,331 pcs
|
10331 pcs | On Request | 1 | On Request | On Request | 16+ | On Request | On Request | |
|
2,864 pcs
|
2864 pcs | On Request | 1 | On Request | On Request | 15+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The ROHM Semiconductor RTR030N05TL is a single N-Channel MOSFET designed for various electronic applications. It features a maximum drain-to-source voltage (Vdss) of 45V and a continuous drain current (Id) of 3A at ambient temperature.
The MOSFET exhibits a low on-resistance (Rds On) of 67mOhm at 3A and 4.5V Vgs, with a gate threshold voltage (Vgs(th)) of 1.5V at 1mA. The input capacitance (Ciss) is 510pF at 10V Vds, and the gate charge (Qg) is 6.2nC at 4.5V Vgs. The maximum gate-source voltage (Vgs) is ±12V.
This device operates within a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 1W (Ta). It is constructed using MOSFET (Metal Oxide) technology.
The RTR030N05TL is packaged in a TSMT3, which corresponds to the SC-96 case code. It is designed for surface mounting, making it suitable for compact circuit designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
45V.
SC-96 surface mount package, also known as TSMT3.
150°C.
67mOhm maximum at 3A and 4.5V gate drive.
6.2nC maximum at 4.5V gate voltage.
510pF maximum at 10V drain-source voltage.
1.5V maximum at 1mA drain current.