| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,160 pcs
|
3160 pcs | On Request | 1 | On Request | On Request | 2013 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The ROHM Semiconductor RTR025P02TL is a P-Channel MOSFET designed for various electronic applications. It features a maximum drain-to-source voltage (Vdss) of 20V and can handle a continuous current of 2.5A at an ambient temperature (Ta).
The MOSFET has a low on-resistance (Rds On) of 95mOhm maximum at 2.5A and 4.5V gate-source voltage (Vgs). Its gate threshold voltage (Vgs(th)) is 2V maximum at 1mA, and the maximum gate-source voltage is ±12V.
This component operates within a temperature range of -55°C to 150°C (TJ). It is packaged in an SC-96 (TSMT3) case and utilizes Surface Mount technology for convenient integration into circuit boards.
Key electrical characteristics include an input capacitance (Ciss) of 630pF at 10V Vds and a gate charge (Qg) of 7nC at 4.5V Vgs. The maximum power dissipation is 1W at Ta.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
20V.
2.5A at ambient temperature (Ta).
95 mOhm at Id = 2.5A and Vgs = 4.5V.
7 nC at Vgs = 4.5V.
Maximum junction temperature is 150°C.
SC-96 (supplier package TSMT3) surface mount.
2V maximum at Id = 1mA.