| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,013 pcs
|
2013 pcs | On Request | 1 | On Request | On Request | 06+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This ROHM Semiconductor RTQ045N03TR is an N-Channel MOSFET with a drain-to-source breakdown voltage (Vdss) of 30V. It offers a continuous drain current (Id) of 4.5A at 25°C and a maximum on-resistance (Rds On) of 43mΩ at 4.5A and 4.5V gate-source voltage.
The MOSFET has a maximum power dissipation of 1.25W (Ta) and an operating junction temperature of up to 150°C. Key electrical parameters include an input capacitance (Ciss) of 540pF at 10V, a gate charge (Qg) of 10.7nC at 4.5V, and a gate threshold voltage (Vgs(th)) of 1.5V at 1mA. The maximum gate-source voltage (Vgs) is ±12V.
Designed for surface mounting, the RTQ045N03TR comes in a SOT-23-6 Thin (TSOT-23-6) package, also referred to as TSMT6 (SC-95). This package type is suitable for automated assembly processes.
Compliance information indicates RoHS3 compliance, REACH unaffected status, and Moisture Sensitivity Level 1 (Unlimited). The product status is listed as 'Not For New Designs'.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) is 30V.
The continuous drain current (Id) is 4.5A at 25°C.
The maximum on-resistance (Rds(on)) is 43mOhm at 4.5A drain current and 4.5V gate-source voltage.
The maximum junction temperature is 150°C.
The device is available in SOT-23-6 Thin, TSOT-23-6, and TSMT6 (SC-95) surface-mount packages.
The maximum gate threshold voltage (Vgs(th)) is 1.5V at 1mA drain current.
The maximum input capacitance (Ciss) is 540pF at 10V drain-source voltage.