| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
39,655 pcs
|
39655 pcs | On Request | 1 | On Request | On Request | 0643+ | On Request | On Request | |
|
2,491 pcs
|
2491 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This N-Channel MOSFET from ROHM Semiconductor, part number RTQ035N03TR, offers a drain-source voltage (Vdss) of 30V and a continuous drain current (Id) of 3.5A at 25°C. Its low on-resistance is 54mOhm maximum at 3.5A and 4.5V gate-source voltage. The device features a gate charge (Qg) of 6.4 nC maximum at 4.5V and a gate threshold voltage (Vgs(th)) of 1.5V maximum at 1mA.
Designed for surface mounting, the RTQ035N03TR utilizes a TSMT6 (SC-95) package. It operates within a temperature range of -55°C to 150°C (TJ). Key electrical characteristics include an input capacitance (Ciss) of 285 pF maximum at 10V and a maximum gate-source voltage (Vgs) of ±12V. The maximum power dissipation is 1.25W (Ta).
This MOSFET is suitable for various electronic applications requiring efficient switching and power management. Its specifications make it a reliable component for designs needing a 30V N-channel MOSFET in a compact surface-mount package.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V.
Surface mount TSMT6 (SC-95) package, also described as SOT-23-6 Thin.
150°C.
Maximum 1.5V at 1mA drain current.
Maximum 54mOhm at 3.5A drain current and 4.5V gate drive.
Maximum 6.4nC at 4.5V gate voltage.