RTQ035N03TR The ROHM Semiconductor RTQ035N03TR is an N-Channel MOSFET with a 30V drain-source voltage and 3.5A continuous drain current. It is designed for surface mounting in a TSMT6 package.
Mfr Part #:

RTQ035N03TR

Available from 2 distributors
Mfr Name: ROHM Semiconductor
ROHM Semiconductor
The ROHM Semiconductor RTQ035N03TR is an N-Channel MOSFET with a 30V drain-source voltage and 3.5A continuous drain current. It is designed for surface mounting in a TSMT6 package.
✓ Total Stock: 42,146 pcs
$ Price Range: $0.99

RTQ035N03TR Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
39,655 pcs
39655 pcs On Request 1 On Request On Request 0643+ On Request On Request
Non-Authorised Inventory information
2,491 pcs
2491 pcs On Request 1 On Request On Request On Request On Request On Request

RTQ035N03TR Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

RTQ035N03TR Description

Short technical summary and product information.

This N-Channel MOSFET from ROHM Semiconductor, part number RTQ035N03TR, offers a drain-source voltage (Vdss) of 30V and a continuous drain current (Id) of 3.5A at 25°C. Its low on-resistance is 54mOhm maximum at 3.5A and 4.5V gate-source voltage. The device features a gate charge (Qg) of 6.4 nC maximum at 4.5V and a gate threshold voltage (Vgs(th)) of 1.5V maximum at 1mA.

 

Designed for surface mounting, the RTQ035N03TR utilizes a TSMT6 (SC-95) package. It operates within a temperature range of -55°C to 150°C (TJ). Key electrical characteristics include an input capacitance (Ciss) of 285 pF maximum at 10V and a maximum gate-source voltage (Vgs) of ±12V. The maximum power dissipation is 1.25W (Ta).

 

This MOSFET is suitable for various electronic applications requiring efficient switching and power management. Its specifications make it a reliable component for designs needing a 30V N-channel MOSFET in a compact surface-mount package.

RTQ035N03TR Quick Information

Product Type: MOSFET
Canonical Name: N-Channel MOSFET
Subcategory: Single FETs, MOSFETs

RTQ035N03TR Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

RTQ035N03TR Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

RTQ035N03TR Features

  • N-Channel MOSFET with 30V drain-source voltage.
  • Continuous drain current of 3.5A.
  • Low on-resistance of 54mOhm.
  • Surface mount TSMT6 package.
  • Operating temperature up to 150°C.

RTQ035N03TR Applications

  • Ideal for power switching circuits.
  • Suitable for voltage regulation.
  • Used in battery management systems.
  • Applicable in DC-DC converters.

RTQ035N03TR FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the RTQ035N03TR?

30V.

What package does the RTQ035N03TR come in?

Surface mount TSMT6 (SC-95) package, also described as SOT-23-6 Thin.

What is the maximum operating junction temperature?

150°C.

What is the typical gate threshold voltage?

Maximum 1.5V at 1mA drain current.

What is the on-resistance of this MOSFET?

Maximum 54mOhm at 3.5A drain current and 4.5V gate drive.

What is the gate charge of the RTQ035N03TR?

Maximum 6.4nC at 4.5V gate voltage.

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