| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,238 pcs
|
3238 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
3,156 pcs
|
3156 pcs | On Request | 1 | On Request | On Request | 24+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Forward Voltage | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The ROHM Semiconductor RTQ025P02TR is a P-Channel MOSFET designed for DC-DC converter applications. It offers a drain-source voltage (Vdss) of 20V and a continuous drain current (Id) of 2.5A at 25°C.
Key electrical characteristics include a low on-resistance of 140mΩ at 2.5A and 4.5V Vgs, and a gate threshold voltage (Vgs(th)) of 2V at 1mA. The device supports low voltage drive with a 2.5V capability. Input capacitance (Ciss) is 580pF at 10V, and total gate charge (Qg) is 6.4nC at 4.5V Vgs.
This MOSFET is housed in a TSMT6 package, also known as SOT-23-6 Thin or TSOT-23-6, suitable for surface mounting. It operates at temperatures up to 150°C (TJ) and comes in a tape and reel package with a basic ordering unit of 3000 pieces.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source breakdown voltage is -20V.
The RTQ025P02TR is housed in a TSMT6 package, which is a thin SOT-23-6 surface-mount configuration.
The maximum channel temperature rating is 150°C.
The typical static drain-source on-state resistance is 140mΩ when driven at 2.5V.
The continuous source current through the body diode is rated at -1A.
The total gate charge is typically 6.4nC under standard test conditions.