| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
15,550 pcs
|
15550 pcs | On Request | 1 | On Request | On Request | 15+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The RTM002P02T2L from ROHM Semiconductor is a P-Channel MOSFET designed for switching applications. It features a maximum Drain-Source Voltage (Vdss) of 20V and a continuous Drain Current (Id) of 200mA at 25°C.
This MOSFET offers a low on-resistance with a maximum of 1.5 Ohms at a gate-source voltage of 4.5V and a drain current of 200mA. The gate threshold voltage (Vgs(th)) is 2V at 1mA. It operates with a drive voltage of 2.5V and has a maximum gate-source voltage of ±12V.
The device is packaged in a VMT3 surface mount package, suitable for compact electronic designs. It has a maximum power dissipation of 150mW at 25°C and an operating temperature range of -55°C to +150°C.
Key electrical characteristics include an input capacitance (Ciss) of 50pF at 10V, output capacitance (Coss) of 5pF, and reverse transfer capacitance (Crss) of 9pF, all measured at 1MHz. The device also specifies a continuous drain current of 200mA and a pulsed drain current of 0.4A.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
20V.
200mA at 25°C ambient.
SOT-723 (VMT3) surface-mount package.
Maximum channel temperature is 150°C and storage temperature range is -55°C to +150°C.
2V maximum at -1mA.
1.5 Ohm at 200mA, 4.5V drive.