| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
39 pcs
|
39 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The ROHM Semiconductor RTF015N03TL is a single N-Channel MOSFET designed for various electronic applications. It features a maximum drain-source voltage (Vdss) of 30V and a continuous current rating of 1.5A at ambient temperature.
The MOSFET has a low gate threshold voltage (Vgs(th)) of 1.5V at 1mA, with drive voltages ranging from 2.5V to 4.5V. Its on-resistance (Rds On) is a maximum of 240mOhm at 1.5A and 4.5V Vgs. Input capacitance (Ciss) is 80pF at 10V, and gate charge (Qg) is 2.2nC at 4.5V Vgs.
This device operates within a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 320mW at ambient temperature. It is housed in a 3-SMD, Flat Leads package, specifically the TUMT3 supplier device package, and is designed for surface mounting.
The RTF015N03TL is RoHS3 compliant, has an MSL rating of 1, and is REACH unaffected. Its technology is MOSFET (Metal Oxide).
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage is 30 V.
It is available in a 3-SMD, Flat Leads package with a TUMT3 supplier device package.
The maximum junction temperature is 150 °C.
It is an N-Channel MOSFET.
The continuous drain current is 1.5 A at ambient temperature.
The maximum on-resistance is 240 mOhm at Vgs = 4.5 V and Id = 1.5 A.
The maximum gate charge is 2.2 nC at Vgs = 4.5 V.