| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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523 pcs
|
523 pcs | On Request | 1 | On Request | On Request | 11+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Forward Voltage | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The ROHM Semiconductor RTE002P02TL is a P-Channel MOSFET suitable for switching applications. It offers a drain-source voltage of 20V and a continuous drain current of 200mA at 25°C ambient temperature. The device exhibits a low on-resistance of 1.5 Ohms at a gate-source voltage of -4.5V and a drain current of -200mA.
This MOSFET is housed in an EMT3 surface mount package, also known as SC-75 or SOT-416. Its operating temperature range is from -55°C to +150°C. Key electrical characteristics include a gate-source voltage range of ±12V and a gate threshold voltage of up to 2V at 1mA.
The device is designed for efficient operation with a 2.5V drive capability. It includes ESD protection diodes and a body diode. The total power dissipation is rated at 150mW at 25°C ambient temperature, with a thermal resistance of 833°C/W channel to ambient.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vdss) is 20V.
The continuous drain current is 200mA.
The maximum on-resistance is 1.5 Ohms at a drain current of 200mA and gate-source voltage of -4.5V.
The RTE002P02TL is in an EMT3 package, also known as SC-75 or SOT-416.
The operating temperature range is -55°C to +150°C.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1.