| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | 16+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The RT1E050RPTR is a P-Channel MOSFET from ROHM Semiconductor. It operates with a maximum drain-to-source voltage of 30V and supports a continuous drain current of 5A. The device features a low on-resistance of 36mOhm at 5A and 10V gate drive, with a gate charge of 13nC and input capacitance of 1300pF. These characteristics make it suitable for efficient power switching and load management applications.
Packaged in a compact 8-SMD flat lead (8-TSST) surface mount package, the RT1E050RPTR is designed for automated assembly and space-constrained designs. The MOSFET uses metal oxide semiconductor technology and can dissipate up to 1.25W. The operating junction temperature range extends to 150°C, supporting reliable operation in various environments.
Typical applications include power distribution, battery protection circuits, and DC-DC converter topologies requiring a P-Channel MOSFET. The device is driven by gate voltages of 4V or 10V for optimized Rds on.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V.
8-SMD, Flat Lead (8-TSST).
150°C.
2.5V at Id=1mA.
36mOhm at 5A, 10V.
5A.