| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,200 pcs
|
2200 pcs | On Request | 1 | On Request | On Request | 0444+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Technology | |
| Thermal Resistance | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The ROHM Semiconductor RSS140N03TB is a high-performance N-Channel MOSFET suitable for power switching and DC/DC converter applications. It offers a drain-source voltage of 30V and a continuous drain current of 14A at 25°C ambient temperature.
Key electrical characteristics include a maximum gate threshold voltage of 2.5V at 1mA and a low maximum on-resistance of 6.7mOhm at 14A and 10V gate-source voltage. The input capacitance is rated at a maximum of 3150pF at 10V, and the maximum gate charge is 37nC at 5V.
This MOSFET is housed in a compact 8-SOP surface-mount package, measuring 3.90mm in width. The operating temperature range is up to 150°C (TJ), with a total power dissipation of 2W at 25°C ambient. The device includes a built-in G-S protection diode.
Applications include power switching circuits and DC/DC converters where efficient power management is critical. Its surface-mount design facilitates integration into compact electronic systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V.
It comes in an 8-SOP surface mount package (8-SOIC with 3.90mm width).
Channel temperature up to 150°C; storage temperature -55 to +150°C.
Maximum 2.5V at VDS=10V, ID=1mA.
6.7mOhm at 14A drain current and 10V gate drive.
Maximum 37nC at 5V gate-source voltage.