| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,500 pcs
|
3500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The ROHM Semiconductor RSS090P03FU7TB is a P-Channel MOSFET designed for various electronic applications. It features a maximum drain-to-source voltage (Vdss) of 30V and can handle a continuous drain current (Id) of 9A at 25°C.
Key electrical characteristics include a maximum on-resistance (Rds On) of 14mOhm at 9A and 10V gate-source voltage, and a gate threshold voltage (Vgs(th)) of 2.5V at 1mA. The device has a maximum gate-source voltage (Vgs) of ±20V and an input capacitance (Ciss) of 4000pF at 10V.
With a maximum power dissipation of 2W at 25°C and an operating junction temperature of up to 150°C, this MOSFET is suitable for applications requiring thermal stability. It is housed in an 8-SOIC package, designed for surface mounting.
This component is RoHS3 compliant, has an MSL rating of 1, and is REACH unaffected. Its specifications make it a versatile choice for power management and switching circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 30V.
The continuous drain current (Id) is 9A at 25°C ambient temperature.
The maximum on-resistance (Rds on) is 14mOhm at 9A drain current and 10V gate drive.
The maximum gate threshold voltage (Vgs(th)) is 2.5V at 1mA drain current.
It is available in an 8-SOIC package (0.154" width, 3.90mm width) with a supplier device package of 8-SOP, surface mount.
The maximum operating junction temperature is 150°C.
It is a P-Channel MOSFET.