| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,272 pcs
|
4272 pcs | On Request | 1 | On Request | On Request | 14+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The ROHM Semiconductor RSS075P03TB is a P-Channel MOSFET designed for various electronic applications. It features a maximum drain-to-source voltage (Vdss) of 30V and can handle a continuous drain current (Id) of up to 7.5A at ambient temperature. The MOSFET exhibits a low on-resistance (Rds On) of 21mOhm at a drain current of 7.5A and a gate-source voltage of 10V.
This device operates within a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 2W (Ta). The gate-source voltage (Vgs) maximum is ±20V, with a gate threshold voltage (Vgs(th)) of 2.5V at 1mA. Input capacitance (Ciss) is 2900pF at 10V, and gate charge (Qg) is 30nC at 5V.
The RSS075P03TB is supplied in an 8-SOP package and utilizes Surface Mount technology for easy integration into circuit boards. Its construction is based on MOSFET (Metal Oxide) technology, making it suitable for switching and amplification tasks in electronic designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30 V.
8-SOP (8-SOIC, 0.154 inch width) surface mount package.
150 °C.
2.5 V at 1 mA drain current.
7.5 A at ambient temperature.
21 mOhm at 7.5 A drain current and 10 V gate voltage.
30 nC at 5 V gate voltage.