| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,648 pcs
|
3648 pcs | On Request | 1 | On Request | On Request | 1204+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The ROHM Semiconductor RSS070P05TB1 is a P-Channel MOSFET with a drain-to-source voltage (Vdss) of 45V. It is designed for surface mount applications and comes in an 8-SOP package.
Key electrical characteristics include a maximum continuous drain current of 7A (Ta) and an on-resistance (Rds On) of 27mOhm at 7A and 10V. The gate charge (Qg) is 47.6 nC (Max) at 5V, with a gate threshold voltage (Vgs(th)) of 2.5V (Max) at 1mA. The maximum gate-source voltage (Vgs) is ±20V.
This MOSFET operates at temperatures up to 150°C and has a maximum power dissipation of 2W (Ta). Its technology is based on MOSFET (Metal Oxide).
The component is suitable for various power management and switching applications where a P-Channel MOSFET is required. Its surface mount package facilitates integration into compact electronic designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) is 45 V.
The continuous drain current is 7 A at ambient temperature.
The maximum on-resistance is 27 mOhm at 7 A and 10 V gate drive.
The device is available in an 8-SOIC (0.154", 3.90mm Width) package with a supplier package of 8-SOP.
The maximum operating junction temperature is 150°C.
The maximum gate threshold voltage is 2.5 V at 1 mA drain current.
The input capacitance is 4100 pF at 10 V drain-source voltage.